all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 03.1, 2016-06-21 ptfc262157fh features ? broadband internal matching, optimized for doherty peak side ? wide video bandwidth ? typical single-carrier wcdma performance, 2690 mhz, 28 v, 10 db par @ 0.01% ccdr - output power at p 1db = 50 w - effciency = 29% - gain = 19.5 db - acpr = C31.5 dbc at 2690 mhz ? capable of handling 10:1 vswr @ 28 v, 180 w (cw) output power ? integrated esd protection: human body model, class 1c (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant thermally-enhanced high power rf ldmos fet 200 w, 28 v, 2620 C 2690 mhz description the ptfc262157fh ldmos fet is designed for use in doherty cellular power applications in the 2620 mhz to 2690 mhz frequency band. input and output matching have been optimized for maximum performance as the peak side transistor in a doherty amplifer. other features include a thermally-enhanced package with earless fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptfc262157fh package h-34288g-4/2 rf characteristics single-carrier wcdma specifcations (tested in infneon test fxture) v dd = 28 v, i dq = 1150 ma, p out = 50 w average, ? = 2690 mhz, 3gpp wcdma signal, 3.84 mhz bandwidth,10 db par @0.01% ccdf characteristic symbol min typ max unit gain gps 18.0 19.5 db drain efficiency h d 27 29 % adjacent channel power ratio acpr C31.5 C30 dbc 0 10 20 30 40 50 16 17 18 19 20 21 32 36 40 44 48 52 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, ? = 2620 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y c262157sh-gr1
ptfc262157fh data sheet 2 of 10 rev. 03.1, 2016-06-21 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 1.1 a v gs 2.65 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 150 w cw) r q jc 0.34 c/w ordering information type and version order code package and description shipping ptfc262157fh v1 r0 ptfc262157fhv1r0xtma1 h-34288g-4/2, ceramic open-cavity, earless tape & reel, 50 pcs ptfc262157fh v1 r250 PTFC262157FHV1R250xtma1 h-34288g-4/2, ceramic open-cavity, earless tape & reel, 250 pcs
data sheet 3 of 10 rev. 03.1, 2016-06-21 ptfc262157fh 0 10 20 30 40 50 16 17 18 19 20 21 32 36 40 44 48 52 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, ? = 2655 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y c262157sh-gr2 0 20 40 60 -50 -40 -30 -20 32 36 40 44 48 52 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, ? = 2655 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency c262157sh-gr5 typical performance (data taken in a reference test fixture) 0 10 20 30 40 50 16 17 18 19 20 21 32 36 40 44 48 52 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, ? = 2690 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y c262157sh-gr3 0 20 40 60 -50 -40 -30 -20 32 36 40 44 48 52 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, ? = 2620 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency c262157sh-gr4
ptfc262157fh data sheet 4 of 10 rev. 03.1, 2016-06-21 -40 -30 -20 -10 0 5 10 15 20 25 2450 2550 2650 2750 2850 input return loss (db) power gain (db) frequency (mhz) small signal cw performance v dd = 28 v, i dq = 1200 ma irl gain c262157sh-gr12 typical performance (cont.) 0 20 40 60 -50 -40 -30 -20 32 36 40 44 48 52 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, ? = 2690 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency c262157sh-gr6 -40 -35 -30 -25 -20 30 34 38 42 46 50 54 imd (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 1200 ma, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw c262157sh-gr7 2620 mhz 2655 mhz 2690 mhz imd up imd low 0 10 20 30 40 50 60 15 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 1200 ma efficienc y gain 2620 mhz 2655 mhz 2690 mhz c262157sh-gr8
data sheet 5 of 10 rev. 03.1, 2016-06-21 ptfc262157fh 0 10 20 30 40 50 60 15 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 1200 ma, ? = 2655 mhz gain efficienc y c262157sh-gr10 v dd = 24 v v dd = 28 v v dd = 32 v c262157sh-gr11 0 10 20 30 40 50 60 15 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i d q = 1200 ma, ? = 2690 mhz gain efficienc y c262157sh-gr11 v dd = 24 v v dd = 28 v v dd = 32 v c262157sh-gr12 typical performance (cont.) 0 10 20 30 40 50 60 15 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 1200 ma, ? = 2620 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficienc y c262157sh-gr9
ptfc262157fh data sheet 6 of 10 rev. 03.1, 2016-06-21 load pull performance z source z load g s d broadband circuit impedance frequency [mhz] z source [w] z load [w] 2585 2.23 C 4.85 4.41 C 3.07 2620 2.18 C 4.70 4.43 C 3.13 2655 2.13 C 4.56 4.44 C 3.18 2690 2.08 C 4.42 4.43 C 3.25 2725 2.04 C 4.28 4.41 C 3.31 pulsed cw signal: 16 sec, 10% duty cycle; 28 v, 1100 ma p 1db class ab max output power max pae z optimum freq [mhz] zs [ w] zl [ w] gain [db] pae [%] p out [dbm] p out [w] zl [ w] gain [db] pae [%] p out [dbm] p out [w] zl [ w] gain [db] pae [%] p out [dbm] p out [w] 2620 4.52 C j5.08 5.5 C j2 18.4 48.1 54.30 269 3.6 C j4.9 19.8 55.8 53.30 214 4.2 C j4.2 19.5 55.3 53.90 245 2655 7.5 C j6.07 5.5 C j1.8 18.5 48.5 54.30 269 4.2 C j4.9 19.9 56.6 53.50 224 4.4 C j4.3 19.7 56.2 53.80 240 2690 7.6 C j6.5 5.7 C j2 19.2 48.2 53.90 245 4.4 C j4.9 20.3 54.5 53.00 200 4.7 C j4 20.0 53.8 53.50 224 pulsed cw signal: 16 sec, 10% duty cycle; 28 v, 50 ma p 1db class b max output power max pae z optimum freq [mhz] zs [ w] zl [ w] gain [db] pae [%] p out [dbm] p out [w] zl [ w] gain [db] pae [%] p out [dbm] p out [w] zl [ w] gain [db] pae [%] p out [dbm] p out [w] 2620 3.82 C j6.78 5.9 C j2.3 17.5 54.0 54.70 295 4 C j4.7 18.4 61.2 53.90 245 4.1 C j4.4 18.3 61.1 54.10 257 2655 4.79 C j6.8 5.7 C j2.1 17.6 54.2 54.60 288 4 C j4.6 18.6 61.1 53.70 234 4.3 C j4.1 18.5 60.8 54.10 257 2690 6.28 C j6.24 5.6 C j1.8 17.7 54.2 54.50 282 4.4 C j4.6 18.6 60.5 53.60 229 4.6 C j4 18.4 60.2 54.00 251
data sheet 7 of 10 rev. 03.1, 2016-06-21 ptfc262157fh component information component description suggested manufacturer p/n input c101 chip capacitor, 1.7 pf atc atc100a1r7cw150xb c102 chip capacitor, 10 pf atc atc100b100jw500xb c103, c104 chip capacitor, 4.7 f nichicon f931c475maa c105, c106 chip capacitor, 10 pf atc atc100a100jw500xb c801, c802, c803 capacitor, 1k pf panasonic electronic components ecj-1vb1h102k ( table cont. next page) reference circuit assembly diagram (not to scale) reference circuit, tuned for 2620 C 2690 mhz dut ptfc262157fh test fixture part no. ltn/ptfc262157fh v1 pcb rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 find gerber fles for this reference fxture on the infneon web site at ( http://www.infneon.com/rfpower ) c802 c801 r801 rf_in v dd rf_out c 2 6 2 1 5 7 f h _ c d _ 8 - 8 - 1 3 r802 s1 s2 r804 c803 r803 s3 r105 r101 r102 c106 c203 c211 c212 c207 c201 c206 c208 c210 c204 c209 c213 c205 c214 c202 c101 c102 r103 c105 c103 c104 r104 ro4350, .020 (60) ro4350, .020 (60) ptfc262157_in_01 ptfc262157_out_01 a v dd v dd ptfc262157fh
ptfc262157fh data sheet 8 of 10 rev. 03.1, 2016-06-21 component information (cont.) component description suggested manufacturer p/n input (cont.) r101, r802 resistor, 10 w panasonic electronic components erj-8geyj100v r102, r103, r104 resistor, 10 w panasonic electronic components erj-3geyj100v r105 resistor, 5.1k w panasonic electronic components erj-8geyj512v r801 resistor, 100 w panasonic electronic components erj-8geyj101v r803 resistor, 1.2k w panasonic electronic components erj-3geyj122v r804 resistor, 1.2k w panasonic electronic components erj-3geyj132v s1 transistor infneon technologies bcp56-10 s2 voltage regulator fairchild semiconductor lm7805 s3 potentiometer, 2k w bourns inc. 3224w-1-202e output c201 chip capacitor, 0.6 atc atc100a0r6cw150xb c202, c204 capacitor, 2.2 f, 50 v panasonic electronic components eee-fp1v221ap c203, c206 chip capacitor, 12 pf atc atc100a120jw150xb c205, c212 capacitor, 10 f garrett electronics 281m5002106k c207, c209 capacitor, 10 f taiyo yuden umk325c7106mm-t c208 chip capacitor, 0.5 pf atc atc100a0r5cw150xb c210, c211 chip capacitor, 1 f tdk corporation c4532x7r2a105m230ka c213, c214 chip capacitor, 2.2 f tdk corporation c4532x7r1h225m160ka reference circuit (cont.)
data sheet 9 of 10 rev. 03.1, 2016-06-21 ptfc262157fh package outline specifications package h-34288g-4/2 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005]. 4. pins: d C drain, s C source, g C gate, v C drain voltage (v dd ). 5. lead thickness: 0.10 +0.051/C0.025 [.004 +.002/C.001]. 6. gold plating thickness: 0.25 micron [10 microinch] max. find the latest and most complete information tabout products and packaging at the infneon internet page ( www.infneon.com/rfpower) diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd . 5. lead thickness: 0.10 + 0.051/-0.025 mm [.005 +0.002/-0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. 2x 2. 29 [. 090 ] 1 . 98 [. 078 ] 21. 72 [. 855 ] 2 x 30. 0 4x r0 . 51 +. 38 - . 13 [ r . 020 +. 015 - . 005 ] 2x 17 . 75 [. 699 ] c l c l c l 45 x . 64 [. 025 ] g d v v 16 . 76 0.51 [. 660 . 020 ] 9 . 78 [. 385 ] 4 x 3.490 . 51 [. 138 . 020 ] c l 9 . 40 [. 370 ] d 4 . 04 +0.25 - 0. 13 [ . 159 +. 010 - . 005 ] sph 1. 57 [. 062 ] 1. 02 [. 040 ] 23 . 11 [. 910 ] s 22. 35 0.20 [. 880 . 008 ] h - 342 88 g - 4 / 2 _ s l _ po _ 03 _ 08 - 08 - 2013
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